Gallium Nitride-based integrated solution for compact and rugged communication base stations
We developed gallium nitride (GaN) radio frequency (RF) power amplifier (PA) technology to technology readiness level (TRL) 7 and started a company to commercialize it. The current application is for a GaN-based complementary logic solution, which uses monolithic or heterogeneous integration to create an integrated, rugged product that maintains performance and reliability in extreme and compact systems. Our team is also developing a low-noise amplifier to go with this.
SINE
GaN process technology know-how, GaN-diamond integration, and all GaN logic.
Showcase at IInvenTiv 1.0 MoE Committee chaired by Shri Pawan Goenka (December 31, 2021); INDUS-X Joint Impact Challenge 1.0 iDEX (February 20, 2024); Delivery milestone ISRO Space Applications Centre (March 23, 2025).
The team includes co-founders who are leads for GaN fabrication and semiconductor nanofabrication at IITB, supported by a strategic technical consultant who is a former associate director at ISRO-SAC, and an advisor who is a former CEO of Tech Mahindra.
Co-Founder
Co-Founder
Consultant
